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Scanning microwave impedance microscope (SMM)
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High sensitivity high vacuum scanning extended resistance microscope (SSRM)
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Atomic force microscope (AFM)
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Conductive atomic force microscope (CAFM)
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Scanning electron microscope (SEM-EDS)
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Transmission electron microscope (TEM-EDS)
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Focused Ion Beam (FIB)
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Scanning Capacitor Microscope (SCM)
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Reverse Engineering
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Scanning electron microscope (SEM-EDS)
[Summary] When the electron beam passes through the surface of the sample, secondary electrons, reflected electrons, characteristic X-rays and other signals will be generated. Scanning Electron Microscope (SEM) mainly collects secondary electrons to reflect the surface morphology and other information of the sample. After being paired with an energy dispersive Spectrometer (EDS), the material composition can be further qualitative and semi-quantitatively analyzed.

Application 1: Analysis of chip surface defects and cross-sectional structure

As shown in the figure, a high-power diagram of the cross-sectional structure of the device is shown in the figure
Application 2: Element composition analysis

As shown in the figure, it is at 3kV Which Delamination obtained in NAND Distribution of surface elements of devices