Development of high sensitivity scanning microwave microscope (SMM) equipment
SMM (Scanning Microweive Microscope/scanning microwave microscope) is a method of separating the impedance obtained from incident and reflected waves when irradiating microwaves onto a sample to obtain local electrostatic capacitance (SMM-C) and resistance (SMM-R). Local conductive and dielectric properties can be directly measured on the sample at the nanoscale (1×10)-18F ～1×10-14F), with ultra-high electrical resolution (less than 1×10-18F) and spatial resolution, suitable for a wide range of materials from conductors to insulators.
Detection capability
Test mode | Test items |
SMM-C Imaging | Carrier concentration, Capacitance changes |
SMM-R Imaging | Changes in conductivity and resistivity |
dC/dV phase (SCM) | Carrier type n/p distribution |
dR/dV amplitude | Related loss coefficient |
dR/dV phase | Related loss coefficient |
Test legends
Test parameters
Sample size requirements | Horizontal direction: 5mm×5mm |
Vertical direction: ~ 20mm | |
※To ensure data accuracy, the flatness of the nanometer level of the sample surface must be ensured. | |
※Generally, the cross-section of the semiconductor device is exposed through mechanical grinding. | |
Measuring range | Horizontal direction: ~ 80μm×80μm (512 points×512 points) |
Vertical direction: The horizontal flatness of the nanometers on the surface of the sample must be ensured. | |
Depth of detection | Nm (high concentration area) ~ Hundreds of nm (low concentration area) |
Horizontal resolution | Tens of nm (high concentration area) ~ hundreds of nm (low concentration area) |
※In addition, the measurement accuracy is also affected by the probe tip state |
Technical Advantages
SMM | SCM | SNDM | |
Measuring accuracy | E14 ～ 20 | E15 ~ 19 | E14 ～ 20 |
atoms/cm3 | atoms/cm3 | atoms/cm3 | |
Concentration analysis | ✓ | × | × |
Linear | Nonlinear | Nonlinear | |
P/N judgment | ✓＊ | ✓ | ✓ |
Spatial resolution | 1 nm～ | 20 nm～ | 20 nm～ |
＊dC/dVmodel(Apply AC voltage measurementCertainly) | |||
Sample delivery requirements
1. Purpose/test content |
2. Sample information |
(1) Number of samples, whetherPrepared samples |
(2) Schematic diagram of the measurement area (CAD diagram or optical microscope photo, etc.), schematic diagram of the line structure or diffusion layer structure, material and polarity of the semiconductor, required magnification, etc. |
(3) Sample preparation requirements (in which direction to grind, cut, etc.) |
3. Other precautions |
(1) Note the sample delivery time, express order number, etc. |
(2) If there are multiple samples, please specify the test priority |
Application scope
