Analysis

We provide two-dimensional nanoscale electrical properties measurement and imaging. Advanced electrical characterization technology and research into next generation semiconductor production equipment are our focus.

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Advanced analysis of devices including solar cells, CMOS sensor, logic/power devices and other third generation of semiconductor materials such as GaN & SiC are provided.

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Power Device

1. Confirm whether the doping region of the high-voltage superjunction SJ (Super Junction) MOSFET is uniform


【Summary】SJ-MOSFET is its unique "super knot". This structure achieves the goal of significantly reducing the on-resistance while maintaining high voltages by arranging multiple perpendicular PN junctions between the D-terminal (drain) and the S-terminal (source). This design breaks the contradiction between on-resistance (RDS(ON)) and breakdown voltage (BV) in traditional VDMOS (vertical dual diffusion metal oxide semiconductor) devices. In the process, SSRM/SMM is usually used to confirm whether its doping meets the target.


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2. ConfirmGallium oxide/Ga2O3Differences in annealing conditions after ion implantation


【Overview】GaO2 GaN compared to SiC and GaN2O3The band gap is wider and has excellent physical properties, so it has attracted much attention as a high-efficiency and low-cost power device material. In device development, it is very important to control the concentration and crystallinity of impurities that affect electrical characteristics. For this type of device, SEM can be used to observe the damaged layer caused by crystal structure disorder caused by ion implantation under different annealing conditions and to measure the changes in surface roughness by AFM.


3. Groove typeSi-mosfetComposite analysis of IDSS leak site


[Overview] As high voltage and high current switches, power devices have attracted much attention in the fields of power/energy saving. When using power devices, poor contact or electrical loss is likely to occur due to the application of high voltage. Therefore, in order to improve product reliability, the cause of failure must be determined and analyzed. For this type of device, EMS can be used for hot spot analysis, and SCM and SEM can be used to evaluate defect morphology and two-dimensional electrical distribution.


4. Frequently brokenGan HemtTwo-dimensional electronic layer evaluation


[Summary] The GaN system high electron mobility transistor "GaN HEMT (High Electron Mobility Transistor)" can obtain a two-dimensional electron gas layer (2DEG) through the AlGaN/GaN heterostructure to increase the electron mobility. It is utilized in fast chargers and the like using its characteristics. For this type of device, film thickness/defect can be characterized by TEM, injection concentration is measured by SIMS, and carrier concentration distribution is characterized by SCM/SMM.


5. ResearchIGBTCauses of latch failure


[Summary] IGBT is a dominant collection of BJT and MOSFETs. It is a bipolar device with MOS structure. It is a power device with high-speed performance of power MOSFETs and low-resistance performance of bipolars. The IGBT has a parasitic PNPN thyristor between the collector and the emitter. Under special conditions, this parasitic device will be turned on, that is, latching occurs, which seriously affects the normal operation of the device. SMM is usually used in the process to clarify the cause of failure.



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