High sensitivity high vacuum scanning extended resistance microscope (SSRM)

【Summary】 SSRM (Scanning Spreading Resistance Microscope) is a two-dimensional visualization of the extended resistance directly below the probe using a conductive probe to scan the surface of the sample with a biased voltage, and can effectively detect a variety of electrical signals including the spatial distribution of carriers through measurement of local resistance at the nano-level.

Application 1: Characterization of electrical characteristics of micro-nano region

As shown in Figure (a), SSRM detects slight resistance changes and micro-domain point defects at the end of the doped region, showing that the doping concentration at the lower tip of the trench is insufficient and the resistance becomes larger, which is not displayed in the SCM image (c).

Application 2: Measurement of electrical characteristic distribution curve

As shown in the figure, SSRM accurately distinguishes N-type and P-type tubes and can measure the resistance curves in the interface area.

Application 3: Chip cross-section carrier concentration distribution diagram

As shown in the figure, the carrier distribution measurement results of the halo ion implantation region can be accurately correspond to the design simulation diagram.

Application 4: Carrier concentration curve measurement

Compared with SIMS, SSRM can truly reflect the concentration of thermally activated ions (carriers) and is still not distorted at the tail.

Application 5: Conductivity detection of solar cell devices

Using SSRM to measure the conductivity distribution of different doped regions of solar cells