Silicon Carbide (SiC)

Silicon carbide (SiC) is a representative of the third generation semiconductor material. It has significant advantages in indicators such as bandwidth gap width, breakdown electric field, thermal conductivity, and electron saturation rate, and can meet the needs of modern industry for high power, high voltage and high frequency.

Compared with traditional silicon devices, silicon carbide (SiC) devices have become viable candidates for the next generation of low-loss semiconductors due to their low on-resistance characteristics and excellent high temperature, high frequency and high voltage performance, which helps significantly reduce the energy consumption of the device.SMM uses reflected wave phase and amplitude to analyze and obtain electrical information such as conductivity, dielectric constant, carrier concentration and type when measuring samples, which can provide data that facilitates fault analysis and design improved dopant distribution.For SiC devices, SEM can be used to observe the cross-sectional morphology, and SMM can be used to observe the two-dimensional distribution of doped carriers p/n, and SSRM can be used to distinguish doped regions at different concentrations.