3rd and 4th generation semiconductors
1. Analysis of the surface characteristics of diamond films
【Overview】Diamond has great application potential in electronic devices in high power, high frequency and high temperature environments with its excellent thermal conductivity, ultra-wide bandgap structure and high carrier mobility. In the process of diamond-based substrate, its electrical properties are usually evaluated using CAFM/SSRM, etc.
2. ObservationGallium nitride/GaNStepped structure of the surface
【Summary】GaN (GaN) as a wide bandgap semiconductor is used in a wide range of fields such as power devices and communications and optical devices. In terms of making devices, the shape and roughness of the wafer surface have a great impact on device performance. When growing GaN wafers, a step-platform structure is formed on the surface due to stress caused by mismatch with the lattice of the support substrate. For this type of device, AFM can be used to measure the step-platform structure of the GaN substrate surface, and parameters such as platform width, step height, surface roughness, and deviation angle can be evaluated.
3. ObservationSiCCarrier distribution of device ion implantation layer
【Overview】Silicon carbide (SiC) devices have become viable candidates for the next generation of low-loss semiconductors due to their low on-resistance characteristics and excellent high temperature, high frequency and high voltage performance, which helps significantly reduce the energy consumption of the device compared to traditional silicon devices. For this type of device, SEM can be used to observe the cross-sectional morphology and SMM can be used to observe the two-dimensional distribution of doped carriers p/n. In addition, since the channel region of the Trench MOSFET structure is the trench sidewall, the flatness of the trench sidewall is related to the reliability of the device. We can characterize the fine structure and surface concave and convexity (roughness) of the relevant areas through AFM scanning.