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Solar Cells
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Rechargeable Battery
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Power Device
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Image Sensor (CMOS Sensor)
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Wafer Substrate & EPI
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Ramp roughness AFM
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Reverse Analysis SMM&SSRM
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Gallium nitride (GaN)
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Silicon Carbide (SiC)
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3rd and 4th generation semiconductors
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Graphene
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Semiconductor Laser
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Chip Multilayer Ceramic Capacitor (MLCC)
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Memory Device
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Reverse Analysis SMM&SSRM
Reverse analysis of SMM (scanning microwave impedance microscope):Reverse analysis is mainly to understand the circuit structure, process technology and material composition of the chip. SMM is a lossless characterization testing method with ultra-high resolution, which can obtain nanoscale morphology maps and nanoscale electrical characteristics of the sample at the same time, helping to identify and distinguish materials in microscopic scenarios.
For example, within the known sample concentration range E17-18 atoms/cm3When the process conditions are used, SCM can be used to determine the sample cross-section P/N type. When the sample concentration range is unknown or the concentration is too high/low, the SCM signal will be inverted, affecting the judgment. At this time, it is recommended to use SMM characterization. The advantage of SMM is that the detectable concentration range is E14~20 atoms/cm3, and the characterization signal is linearly correlated with the concentration.
When the process conditions are not clear, SMM can also be used to characterize electrical properties such as dielectric constant, conductivity, carrier concentration distribution, etc., which is crucial to assist in the analysis of the source/drain region, well structure of the transistor.
Reverse analysis of SSRM (scanning expansion resistance microscope): In the reverse analysis of the chip, SSRM measures local resistance,It can effectively detect various electrical signals such as carrier spatial distribution and conductivity distribution in two-dimensional areas, which can effectively assistUnderstand how the chip works.SSRM spatial resolution can reach ~1-10 nm level, even better than SMM, which is crucial for analyzing the small feature sizes of advanced processes (such as 5nm, 3nm).
For example, using SSRM to test ultrashallow junction CMOSFETs can clearly characterize the SDE region and halo region of ~10nm.
In addition, the SSRM detection resistance range is 104-1012Ω, which means that metal, heavily doped and lightly doped region images can be presented simultaneously.